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Browse Journals & Magazines > Applied Physics Letters ...> Volume:85 Issue:20 Help

Electrical conduction properties of n-type Si-doped AlN with high electron mobility (≫100 cm2 V-1 s-1)

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3 Author(s)
Taniyasu, Yoshitaka ; NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Japan ; Kasu, M. ; Makimoto, T.

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For n-type Si-doped AlN, we have obtained an electron mobility and concentration of 125 cm2 V-1 s-1 and 1.75×1015 cm-3 at 300 K, respectively. At 250 K, the mobility reached the maximum of 141 cm2 V-1s-1. To explain the temperature dependence of the mobility, we calculated mobilities limited by specific scattering mechanisms. We found that the mobility is limited by neutral impurity scattering rather than ionized impurity scattering or lattice scattering because of a large donor ionization energy (∼250 meV).

Published in:
Applied Physics Letters  (Volume:85 ,  Issue: 20 )

Date of Publication: Nov 2004

Page(s):
4672 - 4674
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1824181
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Nov 2004

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