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High-power-density fault-current limiting devices using superconducting YBa2Cu3O7 films and high-resistivity alloy shunt layers

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3 Author(s)
Yamasaki, Hirofumi ; Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan ; Furuse, M. ; Nakagawa, Y.

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Switching of superconducting thin-film resistive fault-current limiting devices with alloy shunt layers was studied. AuAg alloy thin films, whose room-temperature resistivity is about six times higher than that of pure gold, were sputter deposited on YBa2Cu3O7 films on sapphire substrates with high critical current density of Jc=3.05±0.05 MA/cm2. A small sample, 5 mm wide and 40 mm long, had the capacity of a rated current of 32 Arms in normal operation and withstood a high voltage of 107 Vrms for 0.1 s after switching, resulting in a very high switching power density of ∼1.7 kVA/cm2, which is more than four times higher than conventional devices using gold shunt layers.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 19 )