Cart (Loading....) | Create Account
Close category search window

Fabrication of InAs quantum dots on InP(100) by metalorganic vapor-phase epitaxy for 1.55 μm optical device applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Kawaguchi, K. ; Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0197, Japan and Optoelectronic Industry and Technology Development Association (OITDA), 1-20-10, Sekiguchi, Bunkyo-ku, Tokyo, 112-0014, Japan ; Ekawa, M. ; Kuramata, A. ; Akiyama, T.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A change in the density and wavelength of InAs quantum dots (QDs) on InGaAsP/InP(100) substrate grown by metalorganic vapor-phase epitaxy (MOVPE) in accordance with variation in the growth conditions was studied, aiming at optical device applications in the 1.55 μm region. In the moderate V/III ratio region, the size of QDs was found to decrease while the density increased as the group-V source was reduced, but on the other hand, both of them increased monotonously with increasing InAs supply. The combination of changing the V/III ratio and InAs supply allowed us to control the density and wavelength of QDs independently so that QDs with a density as high as 5.6×1010 and a 1.6 μm emission were obtained. The letter reports the MOVPE growth technique of QDs on InGaAsP/InP(100), which connects QDs with mature 1.55 μm device technology.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 19 )

Date of Publication:

Nov 2004

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.