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Fabrication of InAs quantum dots on InP(100) by metalorganic vapor-phase epitaxy for 1.55 μm optical device applications

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7 Author(s)
Kawaguchi, K. ; Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0197, Japan and Optoelectronic Industry and Technology Development Association (OITDA), 1-20-10, Sekiguchi, Bunkyo-ku, Tokyo, 112-0014, Japan ; Ekawa, M. ; Kuramata, A. ; Akiyama, T.
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A change in the density and wavelength of InAs quantum dots (QDs) on InGaAsP/InP(100) substrate grown by metalorganic vapor-phase epitaxy (MOVPE) in accordance with variation in the growth conditions was studied, aiming at optical device applications in the 1.55 μm region. In the moderate V/III ratio region, the size of QDs was found to decrease while the density increased as the group-V source was reduced, but on the other hand, both of them increased monotonously with increasing InAs supply. The combination of changing the V/III ratio and InAs supply allowed us to control the density and wavelength of QDs independently so that QDs with a density as high as 5.6×1010 and a 1.6 μm emission were obtained. The letter reports the MOVPE growth technique of QDs on InGaAsP/InP(100), which connects QDs with mature 1.55 μm device technology.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 19 )

Date of Publication:

Nov 2004

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