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Strain-relieved, dislocation-free InxGa1-xAs/GaAs(001) heterostructure by nanoscale-patterned growth

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6 Author(s)
Lee, S.C. ; Center for High Technology Materials and Department of Electrical and Computer Engineering, University of New Mexico, 1313 Goddard, SE, Albuquerque, New Mexico 87106 ; Dawson, L.R. ; Pattada, B. ; Brueck, S.R.J.
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A strain-relieved, dislocation-free InxGa1-xAs layer is selectively grown on nanoscale SiO2-patterned GaAs(001) by molecular beam epitaxy. By localizing the epitaxial area to a periodic array of nanoscale circular holes opened in a SiO2 mask and allowing the InxGa1-xAs epilayers selectively grown on adjacent holes to coalesce over the SiO2 mask by lateral overgrowth, the strain of the resulting InxGa1-xAs layer (x=0.06) is relieved with a dramatically decreased generation of misfit dislocations. These experimental results qualitatively support the basic idea of the Luryi-Suhir proposal [Appl. Phys. Lett. 49, 140 (1986)].

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 18 )

Date of Publication:

Nov 2004

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