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Photon lifetime dependence of modulation efficiency and K factor in 1.3 μm self-assembled InAs/GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidth

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8 Author(s)
Ishida, M. ; Nanoelectronics Collaborative Research Center, the University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan ; Hatori, N. ; Akiyama, T. ; Otsubo, Koji
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We studied small-signal modulation characteristics of 1.3 μm InAs/GaAs self-assembled quantum-dot lasers in terms of the modulation efficiency and the K factor as a function of the photon lifetime. We could explain the measured photon-lifetime dependence based on the rate equation model considering explicitly the carrier-capture process and Pauli blocking in quantum dots. Our model shows how the modulation bandwidth of quantum-dot lasers is limited by the carrier-capture time and by the maximum modal gain via the K factor. We present prerequisite designs of quantum-dot active regions for over 10 GHz modulation.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 18 )

Date of Publication:

Nov 2004

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