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Effect of thermal strain on the ferroelectric phase transition in polycrystalline Ba0.5Sr0.5TiO3 thin films studied by Raman spectroscopy

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7 Author(s)
Tenne, D.A. ; Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 ; Soukiassian, A. ; Xi, X.X. ; Taylor, T.R.
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We have applied Raman spectroscopy to study the influence of thermal strain on the vibrational properties of polycrystalline Ba0.5Sr0.5TiO3 films. The films were grown by rf magnetron sputtering on Pt/SiO2 surface using different host substrates: strontium titanate, sapphire, silicon, and vycor glass. These substrates provide a systematic change in the thermal strain while maintaining the same film microstructure. From the temperature dependence of the ferroelectric A1 soft phonon intensity, the ferroelectric phase transition temperature, TC, was determined. We found that TC decreases with increasing tensile stress in the films. This dependence is different from the theoretical predictions for epitaxial ferroelectric films. The reduction of the ferroelectric transition temperature with increasing biaxial tensile strain is attributed to the suppression of in-plane polarization due to the small lateral grain size in the films.

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Applied Physics Letters  (Volume:85 ,  Issue: 18 )