By Topic

Effect of thermal strain on the ferroelectric phase transition in polycrystalline Ba0.5Sr0.5TiO3 thin films studied by Raman spectroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Tenne, D.A. ; Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 ; Soukiassian, A. ; Xi, X.X. ; Taylor, T.R.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1813625 

We have applied Raman spectroscopy to study the influence of thermal strain on the vibrational properties of polycrystalline Ba0.5Sr0.5TiO3 films. The films were grown by rf magnetron sputtering on Pt/SiO2 surface using different host substrates: strontium titanate, sapphire, silicon, and vycor glass. These substrates provide a systematic change in the thermal strain while maintaining the same film microstructure. From the temperature dependence of the ferroelectric A1 soft phonon intensity, the ferroelectric phase transition temperature, TC, was determined. We found that TC decreases with increasing tensile stress in the films. This dependence is different from the theoretical predictions for epitaxial ferroelectric films. The reduction of the ferroelectric transition temperature with increasing biaxial tensile strain is attributed to the suppression of in-plane polarization due to the small lateral grain size in the films.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 18 )