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Ba0.5Sr0.5TiO3Bi1.5Zn1.0Nb1.5O7 composite thin films with promising microwave dielectric properties for microwave device applications

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6 Author(s)
Yan, L. ; Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, Lower Kent Ridge Crescent, Singapore 119260 ; Kong, L.B. ; Chen, L.F. ; Chong, K.B.
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Crack-free, dense, and uniform Ba0.5Sr0.5TiO3(BST)–Bi1.5Zn1.0Nb1.5O7(BZN) composite thin films were deposited on (100) LaAlO3, (100) SrTiO3, and (100) MgO substrates via a pulsed laser deposition, using a combined target of BST and BZN ceramics. Phase composition and microstructure of the BST-BZN thin films were characterized by x-ray diffraction and scanning electron microscopy. The films, on LAO, STO, and MgO substrates, showed zero-field microwave (∼7.7 GHz) dielectric constants of 471, 435, and 401, dielectric loss tangents of 0.0048, 0.0043, and 0.0037, and dielectric tunabilities of 6.2%, 6.0%, and 5.7% at ∼8.1 kV/cm, respectively. The good physical and electrical properties of the BST–BZN composite thin films make them promising candidates for microwave device applications.

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Applied Physics Letters  (Volume:85 ,  Issue: 16 )