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Browse Journals & Magazines > Applied Physics Letters ...> Volume:85 Issue:15 Help

Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor

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4 Author(s)
Xu, Zhangcheng ; The Key Lab of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, Ministry of Education, Nankai University, Tianjin 300071, P.R. China and Research Center COM, Technical University of Denmark, DK-2800, Lyngby, Denmark ; Birkedal, Dan ; Juhl, M. ; Hvam, J.M.

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The gain spectra of a submonolayer (SML) InGaAs/GaAs quantum dot (QD) laser working at 30°C were measured using the Hakki–Paoli method. It is found that the maximum modal gain of QD ground states is as high as 44 cm-1 and no gain saturation occurs below the threshold at the lasing wavelength of 964.1 nm. When the injection current is about 0.98 times the threshold, the gain spectrum becomes symmetric with respect to the lasing wavelength, and zero-linewidth enhancement factor is observed. These properties are attributed to the high density and the high uniformity of SML QDs in our laser diode.

Published in:
Applied Physics Letters  (Volume:85 ,  Issue: 15 )

Date of Publication: Oct 2004

Page(s):
3259 - 3261
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1806564
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Oct 2004

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