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Subpicosecond exciton spin relaxation in GaN

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7 Author(s)
Kuroda, T. ; Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan ; Yabushita, T. ; Kosuge, T. ; Tackeuchi, A.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1806284 

The spin-relaxation process of A-band exciton in GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The spin-relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin-relaxation time τs is found to be proportional to T-1.4, where T is the temperature.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 15 )

Date of Publication:

Oct 2004

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