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Transition in growth mode by competing strain relaxation mechanisms: Surfactant mediated epitaxy of SiGe alloys on Si

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2 Author(s)
Kammler, M. ; Institut für Plasma und Laserphysik, Universität Essen, Essen, Germany ; Hoegen, M.Horn-von

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1803914 

Surfactant mediated epitaxy of Si(1-x)Gex alloys on Si(111) can, besides technological importance, clarify the influence of the lattice mismatch during surfactant mediated heteroepitaxial growth. For low Ge concentration we find an immediate layer-by-layer growth, whereas at high Ge concentration a roughening transition followed by relaxation of the lattice mismatch in a periodic dislocation network is preferred. This behavior can be explained by comparing the dislocation nucleation rate on a smooth surface with the island nucleation rate on a pseudomorphic film.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 15 )

Date of Publication:

Oct 2004

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