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High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

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8 Author(s)
Guan-Ting Chen ; Department of Electrical Engineering, National Central University, Chung-Li 320, Taiwan, R.O.C. ; Pan, Chang-Chi ; Fang, Chi-Shin ; Huang, Tzu-Chien
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Thermal stability, optical reflectivity, and contact resistivity of Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN were investigated. In contrast to its Pd/Al/Ti/Au counterparts, Pd/Ni/Al/Ti/Au contacts retained their specific contact resistivity (≪2×10-2 Ω cm2) and reflectivity (≫76%) after long-term annealing at 150 °C in nitrogen ambient. According to the results of the secondary ion mass spectroscopy study, it is suggested that the Ni layer prevents the penetration of Ti into GaN during thermal treatment.

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Applied Physics Letters  (Volume:85 ,  Issue: 14 )