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We report a method for bonding silicon-on-insulator wafers onto glass wafers. After pre-cleaning the wafers by an ozone and ultraviolet exposure, followed by mega-sonic water rinse, the SOI wafers are bonded to glass wafers in a vacuum chamber. This is performed at a temperature of 400 °C under an applied voltage of 700 V. The interface between the glass and SOI wafer is tested mechanically and inspected by electron beam microscopy. Furthermore, we demonstrate removal of the silicon bulk layer after wafer bonding. The quality of the single crystalline Si thin film on the glass wafers has been verified by four-circle x-ray diffraction and scanning electron microscopy. This process will allow us the integration of thin-film electronics in biological sensor applications.
Published in:
Applied Physics Letters
(Volume:85
,
Issue:
12
)
Date of Publication: Sep 2004
- Page(s):
- 2370 - 2372
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.1794855
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Sep 2004
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