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Scanning tunneling microscope study of capped quantum dots

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8 Author(s)
Song, H.Z. ; Nanotechnology Research Center, Fujitsu Laboratories Limited, Morinosato-Wakamiya 10-1, Atsugi, Kanagawa 243-0197, Japan, and Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan ; Kawabe, M. ; Okada, Y. ; Yoshizaki, R.
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On thinly capped InGaAs/GaAs quantum dots (QDs), a simultaneous study of both the microscopic and electronic structures was carried out using scanning tunneling microscopy (STM). Although the surface is morphologically flat, the STM image of the embedded QDs can be clearly observed at cryogenic temperatures and is distinguishable up to room temperature. Such images are available in a particular bias range, which corresponds to the occurrence of QD-associated current, as demonstrated in scanning tunneling spectroscopy.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 12 )

Date of Publication:

Sep 2004

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