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Browse Journals & Magazines > Applied Physics Letters ...> Volume:85 Issue:12 Help

Selective area growth of InAs quantum dots formed on a patterned GaAs substrate

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9 Author(s)
Birudavolu, S. ; Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 ; Nuntawong, N. ; Balakrishnan, G. ; Xin, Y.C.
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We describe the growth and characterization of InAs quantum dots (QDs) on a patterned GaAs substrate using metalorganic chemical vapor deposition. The QDs nucleate on the (001) plane atop GaAs truncated pyramids formed by a thin patterned SiO2 mask. The base diameter of the resulting QDs varies from 30 to 40 nm depending on the size of the mask. With specific growth conditions, we are able to form highly crystalline surface QDs that emit at 1.6 μm under room-temperature photopumped conditions. The crystalline uniformity and residual strain is quantified in high-resolution transmission electron microscopy images and high-resolution x-ray reciprocal space mapping. These strained QDs may serve as a template for selective nucleation of a stacked QD active region.

Published in:
Applied Physics Letters  (Volume:85 ,  Issue: 12 )

Date of Publication: Sep 2004

Page(s):
2337 - 2339
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1792792
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Sep 2004

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