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Comparison of large-scale layer-relaxation simulations with experiment

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3 Author(s)
Schwarz, K.W. ; IBM Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 ; Cai, J. ; Mooney, P.M.

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Recent experiments on the strain relaxation of SiGe layers are related to basic dislocation theory via numerical calculations based on discrete dislocation dynamics. Excellent quantitative agreement is obtained, demonstrating that such technologically interesting problems can be treated on a fundamental level.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 12 )