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Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors

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3 Author(s)
Otsuji, T. ; Kyushu Institute of Technology, Graduate School of Computer Science and Systems Engineering, 680-4 Kawazu, Iizuka, Fukuoka, 820-8502, Japan ; Hanabe, Mitsuhiro ; Ogawara, Osamu

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We have observed the frequency dependence of the plasma resonant intensity in the terahertz range for a short gate-length InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor. The plasma resonance excitation was performed by means of interband photoexcitation using the difference-frequency component of a photomixed laser beam. Under sufficient density of two-dimensional (2D) conduction electrons (≫1012 cm-2) and a moderate modulation index (the ratio of the density of photoexcited electrons to the initial density of the 2D electrons) we clearly observed the plasma-resonant peaks at 1.9 and 5.8 THz corresponding to the fundamental and third-harmonic resonance at room temperature, which is in good agreement with theory.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 11 )

Date of Publication:

Sep 2004

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