We demonstrate that high-quality Ge can be grown on Si covered with a thin layer of chemical SiO2. When the oxidized Si substrate is exposed to Ge molecular beam, 7-nm-wide seed pads form in the oxide layer and “touchdown” on the underlying Si. Upon continued exposure, Ge selectively grows on the seed pads rather than on SiO2, and the seeds coalesce to form an epitaxial lateral overgrowth (ELO) layer. The Ge ELO layer is characterized by transmission electron microscopy and etch-pit density (EPD). The Ge ELO layer is free of dislocation network, but stacking faults exist near the Ge-SiO2 interface. A fraction of these stacking faults propagate to the surface, resulting in EPD less than 2×106 cm-2. The high quality Ge ELO layer is attributed to a high density of nanoscale Ge seed pads interspaced by 2–12-nm-wide SiO2 patches.