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Light-induced metastability in hydrogenated nanocrystalline silicon solar cells

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5 Author(s)
Baojie Yan ; United Solar Ovonic Corporation, 1100 West Maple Road, Troy, Michigan 48084 ; Guozhen Yue ; Owens, Jessica M. ; Yang, J.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1790072 

Light-induced metastability in hydrogenated nanocrystalline silicon (nc-Si:H) single-junction solar cells has been studied under different light spectra. The nc-Si:H studied contains a certain fraction of hydrogenated amorphous silicon (a-Si:H). We observe no light-induced degradation when the photon energy used is lower than the bandgap of a-Si:H, while degradation occurs when the photon energy is higher than the bandgap. We conclude that the light-induced defect generation occurs mainly in the amorphous phase. Light soaking experiments on a-Si:H/a-SiGe:H/nc-Si:H triple-junction solar cells show no light-induced degradation in the bottom cell, because the a-Si:H top and a a-SiGe:H middle cells absorb most of the high-energy photons.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 11 )

Date of Publication:

Sep 2004

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