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Browse Journals & Magazines > Applied Physics Letters ...> Volume:85 Issue:10 Help

Thin film transistors fabricated by in situ growth of SnO2 nanobelts on Au/Pt electrodes

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4 Author(s)
Li, Q.H. ; Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, China ; Chen, Y.J. ; Wan, Q. ; Wang, T.H.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1789232 

Thin film transistors are fabricated by in situ growth of SnO2 nanobelts on Au/Pt electrodes. A linear correlation in the output characteristics is observed at zero gate voltage, indicating Ohmic contacts between the nanobelts and the electrodes. The transistors exhibit n-type behaviors and have a mobility of 1.85 cm2/V s with a current on/off ratio above 103. The conductance increases as the pressure in the device chamber is reduced, which indicates that the transistors are promising for oxygen detecting.

Published in:
Applied Physics Letters  (Volume:85 ,  Issue: 10 )

Date of Publication: Sep 2004

Page(s):
1805 - 1807
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1789232
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Sep 2004

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