By Topic

Pentacene field-effect transistors with sub-10-nm channel lengths

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Liang Wang ; Microelectronics Research Center, the University of Texas at Austin, Austin, Texas 78758 ; Fine, Daniel ; Jung, Taeho ; Basu, Debarshi
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1790033 

The field effect in pentacene thin-film transistors was studied using bottom-contact devices with channel lengths below 10 nm. To suppress spreading current in these devices, which have a small channel width-to-length (W-L) ratio, we employed a pair of guarding electrodes as close as 20 nm to the two sides of the channel. The responses of these nanometer scale transistors exhibit good gate modulation. Mobilities of 0.046 cm2/Vs and on/off ratios of 97 were achieved in sub-10-nm transistors. We find that the device response is strongly influenced by the nature of the metal-semiconductor contact.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 10 )