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Anisotropy of g-factor and electron spin resonance linewidth in modulation doped SiGe quantum wells

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7 Author(s)
Malissa, H. ; Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität, A-4040 Linz, Austria ; Jantsch, W. ; Muhlberger, M. ; Schaffler, F.
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We investigate the electron spin resonance of electrons in Si1-xGex quantum wells defined by SiGe barriers (19%–25%Ge). Adding small amounts of Ge changes both g-factor and linewidth and their anisotropy. We explain these effects in terms of the Bychkov–Rashba field that originates from one-sided modulation doping. The main effect arises from the increase in spin–orbit interaction with increasing x. We argue that these effects may be used to tune the g-factor of electrons in quantum dots for a selective spin manipulation.

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Applied Physics Letters  (Volume:85 ,  Issue: 10 )