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Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing

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3 Author(s)
Negoro, Y. ; Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo-ku, Kyoto 615-8510, Japan ; Kimoto, T. ; Matsunami, H.

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N-type epitaxial 4H-SiC layers grown by hot-wall chemical vapor deposition were investigated with regard to deep centers by capacitance-voltage measurements and deep level transient spectroscopy (DLTS). The DLTS spectra revealed that the concentrations of deep centers were reduced by one order of magnitude by annealing at 1700 °C, compared to those in an as-grown material. The Z1/2 center with an energy level of 0.59±0.03 eV and the EH6/7 center with an energy level of 1.66±0.11 eV below the conduction band edge are annealed out at a temperature of 1700 °C or higher.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 10 )

Date of Publication:

Sep 2004

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