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Photoluminescence of a tensilely strained silicon quantum well on a relaxed SiGe buffer layer

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3 Author(s)
Boucaud, P. ; Institut d’Électronique Fondamentale, UMR CNRS 8622, Bâtiment 220, Université Paris-Sud, 91405 Orsay, France ; El Kurdi, M. ; Hartmann, J.M.

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We have investigated the photoluminescence of tensilely strained silicon layers grown on relaxed SiGe buffer layers. At low excitation densities, the photoluminescence is dominated by the radiative recombinations associated with the dislocations in the buffer layer and the band-edge luminescence of the relaxed SiGe layers. We show that the photoluminescence of a strained silicon quantum well capped by a relaxed SiGe layer can be observed at high excitation densities. The resonance energy of this photoluminescence, observed around 960 meV for the phonon-assisted transition, is in satisfying agreement with the calculated value of the bandgap of the type II strained heterostructure.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 1 )

Date of Publication:

Jul 2004

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