Cart (Loading....) | Create Account
Close category search window
 

Photoluminescence of a tensilely strained silicon quantum well on a relaxed SiGe buffer layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Boucaud, P. ; Institut d’Électronique Fondamentale, UMR CNRS 8622, Bâtiment 220, Université Paris-Sud, 91405 Orsay, France ; El Kurdi, M. ; Hartmann, J.M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1766073 

We have investigated the photoluminescence of tensilely strained silicon layers grown on relaxed SiGe buffer layers. At low excitation densities, the photoluminescence is dominated by the radiative recombinations associated with the dislocations in the buffer layer and the band-edge luminescence of the relaxed SiGe layers. We show that the photoluminescence of a strained silicon quantum well capped by a relaxed SiGe layer can be observed at high excitation densities. The resonance energy of this photoluminescence, observed around 960 meV for the phonon-assisted transition, is in satisfying agreement with the calculated value of the bandgap of the type II strained heterostructure.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 1 )

Date of Publication:

Jul 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.