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Optical amplification and electroluminescence at 1.54 μm in Er-doped zinc silicate germanate on silicon

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4 Author(s)
Baker, C.C. ; Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, Ohio 45221-0030 ; Heikenfeld, J. ; Yu, Z. ; Steckl, A.J.

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Optical amplification and electroluminescence at 1.5 μm is reported in Er-doped Zn2Si0.5Ge0.5O4 (ZSG:Er) on silicon. ZSG:Er films were deposited by rf sputtering from a composite target in Ar/O2 mixtures. Channel waveguides were fabricated by plasma etching with Cl/Ar. The refractive index of ZSG:Er was found to be 1.75 at 1.54 μm. Signal enhancement greater than 13 dB and an internal gain of ∼2 dB have been achieved by optically pumping a 4.7 cm ZSG:Er amplifier. Electroluminescence at 1.5 μm was achieved using an ac device structure with a ZSG:Er central layer and upper and lower dielectric layers. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 9 )