Referenced Items are not available for this document.
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1649798
Scanning transmission electron microscopy (STEM) is a useful technique for the study of the morphology, composition, and electronic structure of quantum wells. However, most previous studies have been on epitaxially grown structures, before they had been used in devices. In this work we show that, with careful specimen preparation, advanced STEM techniques can be used to study a packaged commercially available light-emitting diode. The composition and morphology of both the quantum wells and the superlattices in this device have been determined and the electronic structure was measured with electron energy-loss spectroscopy. © 2004 American Institute of Physics.
Published in:
Applied Physics Letters
(Volume:84
,
Issue:
8
)
Date of Publication: Feb 2004
- Page(s):
- 1371 - 1373
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.1649798
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Feb 2004
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
