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Enhanced formation of luminescent nanocrystal Si embedded in Si/SiO2 superlattice by excimer laser irradiation

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4 Author(s)
Cha, Daigil ; Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusung-dong, Yusung-gu, Daejon, Korea ; Shin, Jung H. ; Song, In-Hyuk ; Min-Koo Han

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The effect of excimer laser annealing on the formation of luminescent nanocrystal Si (nc-Si) embedded in Si/SiO2 superlattice is investigated. An amorphous Si/SiO2 superlattice consisting of 20 periods of 2 nm thin Si layers and 5 nm thin SiO2 layers was deposited on Si using electron cyclotron resonance plasma-enhanced chemical vapor deposition. Excimer laser annealing alone did not result in any nc-Si luminescence even at an energy density sufficient to melt the Si layers. However, if the nc-Si is preformed by a thermal anneal, subsequent excimer laser annealing will result in a threefold increase of the nc-Si luminescence intensity. The temperature dependence of the nc-Si luminescence spectrum, lifetime, and intensity indicates that excimer laser annealing activates luminescent nc-Si by removing defects and amorphous regions in thermally crystallized Si layers without significant changes in the size or shape of nc-Si. © 2004 American Institute of Physics.

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Applied Physics Letters  (Volume:84 ,  Issue: 8 )