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Intrinsic thermally compensated field sensor based on single magnetic tunnel junctions

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5 Author(s)
Malinowski, G. ; Laboratoire de Physique des Matériaux, UMR CNRS 7556, Boîte Postale 239, 54506 Vandoeuvre lès Nancy Cedex, France ; Hehn, M. ; Montaigne, F. ; Jouguelet, E.
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The association of an antiferromagnetic material with a ferromagnetic material in an exchange coupled bilayer is used as a detection layer in a tunnel magnetoresistive sensor. The magnetic response is shown to be reversible and linear depending on the field range to be measured. Both tunnel magnetoresistance and exchange field decrease linearly with the temperature and lead to temperature independent sensor sensibility. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 7 )

Date of Publication:

Feb 2004

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