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Efficiency enhancement of Cu(In,Ga)Se2 solar cells due to post-deposition Na incorporation

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7 Author(s)
Rudmann, D. ; Thin Film Physics Group, Laboratory for Solid State Physics, ETH (Swiss Federal Institute of Technology) Zürich, Technopark, 8005 Zürich, Switzerland ; da Cunha, A.F. ; Kaelin, M. ; Kurdesau, F.
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Cu(In,Ga)Se2 (CIGS) absorber layers for thin-film solar cells were grown without sodium. Na was diffused into some of the absorbers after growth, which led to strongly improved device performance compared with Na-free cells. Efficiencies of 13.3% and 14.4% were achieved at substrate temperatures as low as 400 and 450 °C, respectively. With the post-deposition treatment, the effects of Na on CIGS growth are excluded, and most of the Na is expected to reside at grain boundaries. The dominating cause for Na-induced device improvements might be passivation of grain boundaries. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 7 )

Date of Publication:

Feb 2004

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