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Controlled placement and electrical contact properties of individual multiwalled carbon nanotubes on patterned silicon chips

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5 Author(s)
Hsiou, Y.F. ; Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China ; Yang, Y.J. ; Stobinski, L. ; Kuo, Watson
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1645985 

A scheme that allows on-chip growth of multiwalled carbon nanotubes at designed locations is demonstrated. The nanotubes were grown by thermal chemical vapor deposition and were contacted to nanoscaled Cr electrodes fabricated by standard e-beam lithography techniques. The contacts were found to be Ohmic with resistance values on the order of 103 Ω at room temperature. Remarkably, the contacts showed weak temperature dependence down to 40 mK and were insensitive to the magnetic field up to 5 T. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 6 )

Date of Publication:

Feb 2004

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