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Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells

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6 Author(s)
Walter, G. ; Electrical Engineering Research Laboratory and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801 ; Elkow, J. ; Holonyak, N. ; Heller, R.D.
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Data are presented that demonstrate the continuous wave room-temperature transverse-electric field (TE) visible-spectrum (645 nm) heterostructure laser operation of single-layer compressively strained 3.75 monolayer equivalent InP quantum dots (QDs) coupled to 60 Å wide tensile-strained In0.46Ga0.54P quantum wells (QWs). The simple stripe geometry (200 μm×4 μm) InP QD+InGaP QW heterostructure laser is capable of high performance despite the coupling of two competing recombination systems. The InP QD+InGaP QW laser exhibits low threshold (∼31 mA), high quantum efficiency (72%, ∼1.38 mW/mA), a relatively high characteristic temperature T0 of 69 K, and a shift in wavelength at temperature of 0.19 nm/°C. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 5 )

Date of Publication:

Feb 2004

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