InAs/InAsP composite channels for antimonide-based field-effect transistors

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We report the growth and transport characteristics of stepped InAs/InAs_1-xP_x quantum wells with AlSb barriers. Electron mobilities and carrier concentrations in these composite stepped quantum wells were studied as a function of growth temperature and phosphorus content. For InAs_1-xP_x grown at 430 °C substrate temperature (nominal x=0.2), a high 22 500 cm²/V s electron mobility was observed, while 7100 cm²/V s mobility was observed in a single strained InAs_1-xP_x quantum well layer. Heterostructure field-effect transistors fabricated using the composite quantum wells exhibited increased breakdown voltage and a 14:1 reduction in source-drain dc conduction when compared to a similar InAs-channel device. © 2004 American Institute of Physics.

Published in:
Applied Physics Letters (Volume:84 , Issue: 3 )

Date of Publication: Jan 2004

Page(s):: 437 - 439
ISSN :: 0003-6951
Digital Object Identifier :: 10.1063/1.1642275
Product Type:: Journals & Magazines

Date of Current Version :: 18 June 2009
Issue Date :: Jan 2004

Author(s)

Lin, H.-K.
Department of Materials, and Department of Electrical, and Computer Engineering, University of California, Santa Barbara, California 93106-5050
Kadow, C. ; Dahlstrom, M. ; Bae, J.-U. ; Rodwell, M.J.W. ; Gossard, A.C. ; Brar, B. ; Sullivan, G. ; Nagy, G. ; Bergman, J.