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InAs/InAsP composite channels for antimonide-based field-effect transistors

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10 Author(s)
Lin, H.-K. ; Department of Materials, and Department of Electrical, and Computer Engineering, University of California, Santa Barbara, California 93106-5050 ; Kadow, C. ; Dahlstrom, M. ; Bae, J.-U.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1642275 

We report the growth and transport characteristics of stepped InAs/InAs1-xPx quantum wells with AlSb barriers. Electron mobilities and carrier concentrations in these composite stepped quantum wells were studied as a function of growth temperature and phosphorus content. For InAs1-xPx grown at 430 °C substrate temperature (nominal x=0.2), a high 22 500 cm2/V s electron mobility was observed, while 7100 cm2/V s mobility was observed in a single strained InAs1-xPx quantum well layer. Heterostructure field-effect transistors fabricated using the composite quantum wells exhibited increased breakdown voltage and a 14:1 reduction in source-drain dc conduction when compared to a similar InAs-channel device. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 3 )

Date of Publication:

Jan 2004

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