Cart (Loading....) | Create Account
Close category search window

InAs/InAsP composite channels for antimonide-based field-effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Lin, H.-K. ; Department of Materials, and Department of Electrical, and Computer Engineering, University of California, Santa Barbara, California 93106-5050 ; Kadow, C. ; Dahlstrom, M. ; Bae, J.-U.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We report the growth and transport characteristics of stepped InAs/InAs1-xPx quantum wells with AlSb barriers. Electron mobilities and carrier concentrations in these composite stepped quantum wells were studied as a function of growth temperature and phosphorus content. For InAs1-xPx grown at 430 °C substrate temperature (nominal x=0.2), a high 22 500 cm2/V s electron mobility was observed, while 7100 cm2/V s mobility was observed in a single strained InAs1-xPx quantum well layer. Heterostructure field-effect transistors fabricated using the composite quantum wells exhibited increased breakdown voltage and a 14:1 reduction in source-drain dc conduction when compared to a similar InAs-channel device. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 3 )

Date of Publication:

Jan 2004

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.