Cart (Loading....) | Create Account
Close category search window

Charge trapping studies on ultrathin ZrO2 and HfO2 high-k dielectrics grown by room temperature ultraviolet ozone oxidation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ramanathan, Shriram ; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 ; McIntyre, Paul C. ; Guha, Supratik ; Gusev, Evgeni

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We report detailed charge trapping reliability characteristics of ultrathin ZrO2 and HfO2 dielectrics grown by the ultraviolet ozone oxidation (UVO) method. We also discuss the dependence of charge trapping on the top electrode deposition process, specifically in situ versus ex situ processed gates. Electrical data show that the charge trapping characteristics depend on the deposition method for the top electrode, likely due to exposure of the high-k material to ambient prior to deposition of the electrode. It is also shown that C–V hysteresis is not a complete measure of the charge trapping characteristics of the dielectrics. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 3 )

Date of Publication:

Jan 2004

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.