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Electron field emission from SiC/Si heterostructures by high temperature carbon implantation into silicon

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7 Author(s)
Xing, Y.M. ; Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China ; Zhang, J.H. ; Yang, W.W. ; Yu, Y.H.
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A high-intensity electron field emission was obtained from a SiC/Si heterostructure, which was formed by high temperature carbon implantation into silicon. Densely distributed sharp tips were easily obtained at the interface of the SiC/Si heterostructure by post-implantation etching off the top Si. A low turn-on field of 2.6 Vm was observed with samples formed by 160 keV carbon implantation with a dose of 8.0×1017 cm-2. The existence of the densely distributed small protrusions was considered as the main reason for efficient emission.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 26 )

Date of Publication:

Jun 2004

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