By Topic

Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
9 Author(s)
Cheng, Yung-Chen ; Graduate Institute of Electro-Optical Engineering, Graduate Institute of Electronics Engineering, and Department of Electrical Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei, Taiwan, Republic of China ; Wu, Cheng-Ming ; Chen, Meng-Kuo ; Yang, C.C.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1767603 

The optical properties and nanostructures of two InGaN/GaN quantum-well (QW) samples of slightly different structures are compared. In one of the samples, InN interfacial layers of a few monolayers are added to the structure between wells and barriers for improving the QW interface quality. Compared with the standard barrier-doped QW sample, the addition of the InN interfacial layers does improve the QW interface quality and hence the photon emission efficiency. The strain state analysis images show the high contrast between the clear QW interface in the sample with InN layers and the diffusive QW boundaries in the reference sample. The detection-energy-dependent photoluminescence excitation data reveal the consistent results.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 26 )