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Browse Journals & Magazines > Applied Physics Letters ...> Volume:84 Issue:26 Help

Thermoelectric devices using InN and Al1-xInxN thin films prepared by reactive radio-frequency sputtering

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5 Author(s)
Yamaguchi, Shigeo ; Department of Electrical, Electronic and Information Engineering and High-Tech Research Center, Kanagawa University, 3-27-1 Rokkakubashi, Kanagawa-ku, Yokohama 221-8686, Japan and Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2 Umezono 1-1-1, Tsukuba 305-8568, Japan ; Izaki, Ryohei ; Kaiwa, Nakaba ; Sugimura, Satoshi
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We have fabricated thermoelectric devices using InN and Al0.25In0.75N prepared by radio-frequency sputtering. The devices are composed of (a) Al0.25In0.75N–chromel of 20 pairs on SiO2 glass, (b) InN–chromel of 20 pairs on SiO2 glass, and (c) InN-chromel of 20 pairs on polyimide film. The maximum output power and the open output voltage were (a) 1.6×10-6 W and 0.21 V at the temperature difference ΔT=345 K, 263×10-12 W and 2.7×10-3 V at ΔT=4.8 K, (b) 3.9×10-6 W and 0.22 V at ΔT=332 K, 282×10-12 W and 2.4×10-3 V at ΔT=4.1 K, and (c) 0.33×10-6W and 0.089 V at ΔT=280 K, 63×10-12W and 1.4×10-3V at ΔT=4.5 K, respectively.

Published in:
Applied Physics Letters  (Volume:84 ,  Issue: 26 )

Date of Publication: Jun 2004

Page(s):
5344 - 5346
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1766400
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jun 2004

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