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Well-behaved metal–oxide–semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor–liquid hybrid deposition process

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3 Author(s)
Xuan, Y. ; MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Central 4, Tsukuba, Ibaraki 305-8562, Japan ; Hojo, D. ; Yasuda, T.

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We report electrical properties of hafnium silicate films prepared in an atomic layer deposition mode using Hf(OtC4H9)4 and Si(OC2H5)4 precursors. Film deposition was carried out at room temperature using the vapor–liquid hybrid deposition technique. The C–V curve of the metal–oxide–semiconductor capacitor fabricated by postdeposition anneal and Au electrode evaporation shows good agreement with the theoretical one except for a positive flatband voltage shift of 0.2–0.3 V. The leakage current density was four orders of magnitude lower than SiO2 reference data in the equivalent-oxide-thickness range of ≪2.5 nm. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 25 )