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Formation of SiGe nanocrystals in HfO2 using in situ chemical vapor deposition for memory applications

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11 Author(s)
Gupta, Rohit ; Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 ; Yoo, Won Jong ; Wang, Yingqian ; Tan, Zerlinda
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The in situ deposition process of SiGe nanocrystals on SiO2 and HfO2 substrates was studied using Auger electron spectroscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. The Ge concentration in SiGe nanocrystals increased with deposition time at equal Si/Ge flow rates. Analysis indicated that the nucleation of Ge takes place preferentially on prenucleated Si on the dielectric. Memory transistors were fabricated using SiGe nanocrystals and HfO2 tunneling/control dielectrics as a gate stack. Memory effects from floating SiGe nanocrystals in HfO2 were clearly observed at room temperature from metal–oxide–semiconductor field effect transistor devices with a threshold voltage shift of about 0.5 V with the application of +4 V. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 21 )

Date of Publication:

May 2004

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