By Topic

Frequency locking and wavelength tuning of nanosecond pulsed broad-area semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Liu, Y. ; Center for Engineering Science Advanced Research, Computer Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 ; Kireev, V. ; Braiman, Y.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We discuss experimental results of frequency locking and wavelength tuning of a nanosecond pulsed broad-area semiconductor laser. Nanosecond optical pulses with peak power of 25 W and repetition rates of 4–240 kHz are generated from a broad-area laser. An external cavity with a diffractive grating is used to reduce the linewidth of the laser from over 5 nm to less than 0.1 nm. The wavelength of the pulsed laser is tunable over more than 10 nm. The dependence of the laser linewidth on pulse parameters has been investigated. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 21 )