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We present a quantum-dot microcavity light-emitting diode emitting at 1.3 μm at room temperature. The long wavelength emission is achieved by using InGaAs quantum dots directly grown on GaAs, by metalorganic chemical vapor deposition. The device exhibits electroluminescence bright emission, peaked at 1298 nm and with a full width at half maximum of 6.5 meV. © 2004 American Institute of Physics.
Published in:
Applied Physics Letters
(Volume:84
,
Issue:
21
)
Date of Publication: May 2004
- Page(s):
- 4155 - 4157
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.1755411
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- May 2004
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