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Low-loss GaInNAs saturable absorber mode locking a 1.3-μm solid-state laser

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6 Author(s)
Liverini, V. ; Department of Physics, Institute of Quantum Electronics, Swiss Federal Institute of Technology, Zürich, Switzerland ; Schon, S. ; Grange, R. ; Haiml, M.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1748841 

We have demonstrated stable self-starting passive cw mode locking of a solid-state laser at about 1.3 μm using a GaInNAs semiconductor saturable absorber mirror (SESAM). GaInNAs SESAMs show negligible nonsaturable losses, low saturation fluences (11 μJ/cm2) and picosecond decay times which make them well-suited for self-starting and stable cw mode locking. Sub-10-ps pulses were produced with a Nd:YLF laser at 1314 nm. The incorporation of about 2% nitrogen into InGaAs redshifts the absorption edge above 1330 nm and reduces the strain in the saturable absorber grown on a GaAs/AlAs Bragg mirror. Final absorption edge adjustments have been made with thermal annealing which blueshifts the absorption edge. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 20 )

Date of Publication:

May 2004

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