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Synthesis and characterization of two-layer-structured ZnO p-n homojunctions by ultrasonic spray pyrolysis

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5 Author(s)
Bian, J.M. ; State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, People’s Republic of China ; Li, X.M. ; Zhang, C.Y. ; Chen, L.D.
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The two-layer-structured ZnO p-n homojunctions were prepared on single-crystal Si (100) substrate by depositing undoped n-type ZnO film on N–In codoped p-type ZnO film using ultrasonic spray pyrolysis. The crystal structure and morphology of the obtained ZnO homojunctions were examined by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The two-layer structure was confirmed by secondary ion mass spectroscopy depth profile analysis. The current–voltage (I–V) characteristics derived from the undoped ZnO/N–In codoped ZnO two-layer structure clearly show the rectifying characteristics of typical p-n junctions. © 2004 American Institute of Physics.

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Applied Physics Letters  (Volume:84 ,  Issue: 19 )