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Improved quantum efficiency in nonpolar (112¯0) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth

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8 Author(s)
Koida, T. ; Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, JapanNICP, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan ; Chichibu, S.F. ; Sota, T. ; Craven, M.D.
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Radiative and nonradiative excitonic transitions in nonpolar (112¯0) AlxGa1-xN/GaN multiple quantum wells (MQWs) grown on the GaN template prepared by lateral epitaxial overgrowth (LEO-GaN) were investigated. The structural advantages of using nonpolar orientations were confirmed by a moderate shift of the photoluminescence (PL) peak energy and negligible change in low-temperature PL lifetime with decreasing GaN well width, both of which are the results of eliminating quantum-confined Stark effects due to the polarization fields that exist in polar (0001) MQWs. Appearance of the correct in-plane light polarization and improved internal quantum efficiency for the PL peak in the MQWs on LEO-GaN were attributed to the reduction in densities of nonradiative defects and bound states. © 2004 American Institute of Physics.

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Applied Physics Letters  (Volume:84 ,  Issue: 19 )