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Leakage behavior of the quasi-superlattice stack for multilevel charge storage

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6 Author(s)
Chang, T.C. ; Department of Physics and Institute of Electro-Optical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 804, Taiwan, R.O.C. ; Yan, S.T. ; Liu, P.T. ; Chen, C.W.
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The leakage behavior of the quasi-superlattice structure has been characterized by current–voltage measurements at room temperature and 50 K. A resonant tunnelinglike leakage characteristic is observed at low temperature. The resonant tunneling occurs at around 2, 5.2, and 7 V under a gate voltage swept from 0 to 10 V. A concise physical model is proposed to characterize the leakage mechanism of tunneling for the quasi-lattice structure and suggests that the considerations of the operating voltage for the two-bit per cell nonvolatile-memory device need to be taken into account. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 18 )

Date of Publication:

May 2004

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