Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1739514
The leakage behavior of the quasi-superlattice structure has been characterized by current–voltage measurements at room temperature and 50 K. A resonant tunnelinglike leakage characteristic is observed at low temperature. The resonant tunneling occurs at around 2, 5.2, and 7 V under a gate voltage swept from 0 to 10 V. A concise physical model is proposed to characterize the leakage mechanism of tunneling for the quasi-lattice structure and suggests that the considerations of the operating voltage for the two-bit per cell nonvolatile-memory device need to be taken into account. © 2004 American Institute of Physics.