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Wafer-bonded semiconductors using In/Sn and Cu/Ti metallic interlayers

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3 Author(s)
Shi, Frank ; Research and Development, Micron Technology, Inc., Mail Stop 01-719, 8000 S. Federal Way, Boise, Idaho 83707 ; Chen, Hao ; MacLaren, Scott

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This work reports on the interface microstructures and interface electrical and optical properties of wafer-bonded semiconductors using In/Sn and Cu/Ti as the metallic interlayers. The interface microstructures of the wafer-bonded semiconductors were characterized using transmission electron microscopy and scanning electron microscopy. The interface imperfections and their potential influences on the interface electrical performances were discussed. The interface electrical and optical characteristics of the metal-bonded wafers were also compared with those of directly fused wafers. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 18 )