By Topic

Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb–GaInAs/GaAs bilayer quantum wells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kudrawiec, R. ; Institute of Physics, Wrocław University of Technology, Wybrzez˙e Wyspiańskiego 27, 50-370 Wrocław, Poland ; Sek, G. ; Ryczko, K. ; Misiewicz, J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1737065 

GaAsSb–GaInAs/GaAs bilayer quantum wells which consist of two adjacent layers of GaAsSb and GaInAs sandwiched between GaAs barriers have been investigated by photoreflectance (PR) spectroscopy. The oscillator strengths of optical transitions in such multiheterointerface structures have been determined from the experiment and compared with the results of envelope function calculations. Additionally, the broadening of the PR features has been analyzed and a correlation has been found with the character of the transitions: the broadening increases significantly when the type of the transition changes from direct to indirect. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 18 )