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Structure of 6H silicon carbide/silicon dioxide interface trapping defects

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4 Author(s)
Meyer, David J. ; The Pennsylvania State University, University Park, Pennsylvania 16802 ; Bohna, Nathaniel A. ; Lenahan, P.M. ; Lelis, A.J.

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We utilize spin-dependent recombination (SDR) to observe deep level trap defects at or very near the interface of 6H silicon carbide and the SiO2 gate dielectric in SiC metal-oxide-semiconductor field effect transistors. The SDR response is strongly correlated to SiC/SiO2 interface recombination currents. The magnitude of the SDR response is correlated with processing-induced changes in interface trap density, an extremely strong indication that we are observing the dominating interface/near interface trapping defects. The SDR response is extremely large, as large as one part in 350. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 17 )