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High-mobility field-effect transistors based on transition metal dichalcogenides

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5 Author(s)
Podzorov, V. ; Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 ; Gershenson, M.E. ; Kloc, Ch. ; Zeis, R.
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We report on fabrication of field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/V s for the p-type conductivity in the WSe2-based FETs at room temperature). These FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in “flexible” electronics. © 2004 American Institute of Physics.

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Applied Physics Letters  (Volume:84 ,  Issue: 17 )