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Anomalous threshold voltage change by 2 MeV electron irradiation at 100 °C in deep submicron metal-oxide-semiconductor field-effect transistors

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6 Author(s)
Hayama, K. ; Kumamoto National College of Technology, 2659-2 Suya Nishigoshi Kumamoto 861-1102, Japan ; Ohyama, H. ; Simoen, E. ; Rafı , J.M.
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The degradation of the electrical properties of deep submicron metal-oxide-semiconductor field-effect transistors (MOSFETs) by 2 MeV electron irradiation at high temperatures was studied. The irradiation temperatures were 30, 100, 150 and 200 °C, and the fluence was fixed at 1015 e/cm2. For most experimental conditions, the threshold voltage (VT) is observed to reduce in absolute value both for n- and p-MOSFETs. This reduction is most pronounced at 100 °C, as at this irradiation temperature, the radiation-induced density of interface traps is highest. It is proposed that hydrogen neutralization of the dopants in the substrate plays a key role, whereby the hydrogen is released from the gate by the 2 MeV electrons. © 2004 American Institute of Physics.

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Applied Physics Letters  (Volume:84 ,  Issue: 16 )