In this work, we demonstrate the growth, characterization, and processing of InGaAsN single quantum well p-i-n structures by solid-source molecular-beam epitaxy on misoriented GaAs (111)B substrates. Two different misorientations were studied simultaneously, 1° toward [-211] and 2° toward [2-1-1], the latter showing the highest optical quality. The roles of the arsenic flux, substrate misorientation, and amount of active nitrogen on the optical properties and crystal quality are discussed. We demonstrate photoluminescence emission at wavelength as long as 1.42 μm at 16 K on (111)B GaAs. Postgrowth rapid thermal annealing improves crystal quality and typical blueshifts of the peak emission are observed, like the case of (100). © 2004 American Institute of Physics.