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Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors

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7 Author(s)
Knap, W. ; GES, CNRS-Université Montpellier 2, 34900 Montpellier, FranceElectrical, Computer and System Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180 ; Lusakowski, J. ; Parenty, T. ; Bollaert, S.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1689401 

We report on the resonant, voltage tunable emission of terahertz radiation (0.4–1.0 THz) from a gated two-dimensional electron gas in a 60 nm InGaAs high electron mobility transistor. The emission is interpreted as resulting from a current driven plasma instability leading to oscillations in the transistor channel (Dyakonov–Shur instability). © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 13 )

Date of Publication:

Mar 2004

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