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We report on the resonant, voltage tunable emission of terahertz radiation (0.4–1.0 THz) from a gated two-dimensional electron gas in a 60 nm InGaAs high electron mobility transistor. The emission is interpreted as resulting from a current driven plasma instability leading to oscillations in the transistor channel (Dyakonov–Shur instability). © 2004 American Institute of Physics.